المعرفة

ذاكرة القراءة فقط

(تم التحويل من ROM)
The concept of read-only data can also refer to file system permissions.
إذا كنت تريد the British book publisher، انظر Read-Only Memory (publisher). إذا كنت تريد other uses، انظر ROM (disambiguation).

ذ ق ف - ذاكرة الـقـراءة فـقط و هي مختصر لـ(Read Only Memory) و هذه الذاكرة تصمم من قبل الشركة المصممة للوحة الام و هي تحوي برامج منها مشغل الكمبيوتر البدائي بمعنى بداية تشغيل الحاسوب قبل التحميل من القرص الصلب. كما يحوي على برنامج اخر للتعرف على الاجهزه الموصوله بالجهاز و يعطي تقرير عن ذلك. كما أنه لا يمكن حذف المعلومات التي تحويها هذه الذاكرة.

an EPROM
أنواع ذاكرة الحاسوب
Volatile
Non-volatile

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التاريخ

روم المكونات المنفصلة

IBM used capacitor read-only storage (CROS) and transformer read-only storage (TROS) to store microcode for the smaller System/360 models, the 360/85, and the initial two System/370 models (370/155 and 370/165). On some models there was also a writeable control store (WCS) for additional diagnostics and emulation support. The Apollo Guidance Computer used core rope memory, programmed by threading wires through magnetic cores.

روم الحالة الصلبة

انظر أيضاً: ذاكرة أشباه الموصلات
 
Many game consoles use interchangeable ROM cartridges, allowing for one system to play multiple games. Shown here is the inside of a Pokemon Silver Game Boy cartridge. The ROM is the IC on the right labeled "MX23C1603-12A".


الأنواع

مبرمجة في المصنع

قابلة للبرمجة في الحقل

تكنولوجيات أخرى

There are other types of non-volatile memory which are not based on solid-state IC technology, including:

 
Transformer matrix ROM (TROS), from the IBM System 360/20

السرعة

Although the relative speed of RAM vs. ROM has varied over time, اعتبارا من 2007 large RAM chips can be read faster than most ROMs. For this reason (and to allow uniform access), ROM content is sometimes copied to RAM or shadowed before its first use, and subsequently read from RAM.

الكتابة

For those types of ROM that can be electrically modified, writing speed has traditionally been much slower than reading speed, and it may need unusually high voltage, the movement of jumper plugs to apply write-enable signals, and special lock/unlock command codes. Modern NAND Flash achieves the highest write speeds of any rewritable ROM technology, with speeds as high as 10 GB/s. This has been enabled by the increased investment in both consumer and enterprise solid state drives and flash memory products for higher end mobile devices. On a technical level the gains have been achieved by increasing parallelism both in controller design and of storage, the use of large DRAM read/write caches and the implementation of memory cells which can store more than one bit (DLC, TLC and MLC). The latter approach is more failure prone but this has been largely mitigated by overprovisioning (the inclusion of spare capacity in a product which is visible only to the drive controller) and by increasingly sophisticated read/write algorithms in drive firmware.

خط زمني

انظر أيضاً: Flash memory § Timeline, Random-access memory § Timeline, and Transistor count § Memory
Date of introduction Chip name Capacity (bits) ROM type MOSFET Manufacturer(s) Process Area Ref
1956 ? ? PROM ? Arma ? ? [1][2]
1965 ? 256-bit ROM Bipolar TTL Sylvania ? ? [3]
1965 ? 1 kb ROM MOS General Microelectronics ? ?
1969 3301 1 kb ROM Bipolar Intel ? ? [3]
1970 ? 512-bit PROM Bipolar TTL Radiation ? ? [4]
1971 1702 2 kb EPROM Static MOS (silicon gate) Intel ? 15 mm² [4][5]
1974 ? 4 kb ROM MOS AMD, General Instrument ? ? [3]
1974 ? ? EAROM MNOS General Instrument ? ? [4]
1975 2708 8 kb EPROM NMOS (FGMOS) Intel ? ? [6][7]
1976 ? 2 kb EEPROM MOS Toshiba ? ? [8]
1977 µCOM-43 (PMOS) 16 kb PROM PMOS NEC ? ? [9]
1977 2716 16 kb EPROM TTL Intel ? ? [10][11]
1978 EA8316F 16 kb ROM NMOS Electronic Arrays ? 436 mm² [3][12]
1978 µCOM-43 (CMOS) 16 kb PROM CMOS NEC ? ? [9]
1978 2732 32 kb EPROM NMOS (HMOS) Intel ? ? [6][13]
1978 2364 64 kb ROM NMOS Intel ? ? [14]
1980 ? 16 kb EEPROM NMOS Motorola 4,000 nm ? [6][15]
1981 2764 64 kb EPROM NMOS (HMOS II) Intel 3,500 nm ? [6][15][16]
1982 ? 32 kb EEPROM MOS Motorola ? ? [15]
1982 27128 128 kb EPROM NMOS (HMOS II) Intel ? ? [6][15][17]
1983 ? 64 kb EPROM CMOS Signetics 3,000 nm ? [15]
1983 27256 256 kb EPROM NMOS (HMOS) Intel ? ? [6][18]
1983 ? 256 kb EPROM CMOS Fujitsu ? ? [19]
January 1984 MBM 2764 64 kb EEPROM NMOS Fujitsu ? 528 mm² [20]
1984 ? 512 kb EPROM NMOS AMD 1,700 nm ? [15]
1984 27512 512 kb EPROM NMOS (HMOS) Intel ? ? [6][21]
1984 ? 1 Mb EPROM CMOS NEC 1,200 nm ? [15]
1987 ? 4 Mb EPROM CMOS Toshiba 800 nm ? [15]
1990 ? 16 Mb EPROM CMOS NEC 600 nm ? [15]
1993 ? 8 Mb MROM CMOS Hyundai ? ? [22]
1995 ? 1 Mb EEPROM CMOS Hitachi ? ? [23]
1995 ? 16 Mb MROM CMOS AKM, Hitachi ? ? [23]


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انظر أيضاً

ملاحظات

الهامش

  1. ^ خطأ استشهاد: وسم <ref> غير صحيح؛ لا نص تم توفيره للمراجع المسماة Huang2008
  2. ^ خطأ استشهاد: وسم <ref> غير صحيح؛ لا نص تم توفيره للمراجع المسماة AufaureZimányi2013
  3. ^ أ ب ت ث "1965: Semiconductor Read-Only-Memory Chips Appear". Computer History Museum. Retrieved 20 June 2019.
  4. ^ أ ب ت "1971: Reusable semiconductor ROM introduced". Computer History Museum. Retrieved 19 June 2019.
  5. ^ "1702A Datasheet" (PDF). Intel. Retrieved 6 July 2019.
  6. ^ أ ب ت ث ج ح خ "A chronological list of Intel products. The products are sorted by date" (PDF). Intel museum. Intel Corporation. July 2005. Archived from the original (PDF) on August 9, 2007. Retrieved July 31, 2007.
  7. ^ "2708 Datasheet" (PDF). Intel. Retrieved 6 July 2019.
  8. ^ Iizuka, H.; Masuoka, F.; Sato, Tai; Ishikawa, M. (1976). "Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure". IEEE Transactions on Electron Devices. 23 (4): 379–387. Bibcode:1976ITED...23..379I. doi:10.1109/T-ED.1976.18415. ISSN 0018-9383.
  9. ^ أ ب µCOM-43 SINGLE CHIP MICROCOMPUTER: USERS' MANUAL (PDF). NEC Microcomputers. January 1978. Retrieved 27 June 2019.
  10. ^ "Intel: 35 Years of Innovation (1968–2003)" (PDF). Intel. 2003. Retrieved 26 June 2019.
  11. ^ "2716: 16K (2K x 8) UV ERASABLE PROM" (PDF). Intel. Retrieved 27 June 2019.
  12. ^ "1982 CATALOG" (PDF). NEC Electronics. Retrieved 20 June 2019.
  13. ^ "2732A Datasheet" (PDF). Intel. Retrieved 6 July 2019.
  14. ^ Component Data Catalog (PDF). Intel. 1978. pp. 1–3. Retrieved 27 June 2019.
  15. ^ أ ب ت ث ج ح خ د ذ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
  16. ^ "2764A Datasheet" (PDF). Intel. Retrieved 6 July 2019.
  17. ^ "27128A Datasheet" (PDF). Intel. Retrieved 6 July 2019.
  18. ^ "27256 Datasheet" (PDF). Intel. Retrieved 2 July 2019.
  19. ^ "History of Fujitsu's Semiconductor Business". Fujitsu. Retrieved 2 July 2019.
  20. ^ "MBM 2764" (PDF). Fujitsu. January 1984. Retrieved 21 June 2019.
  21. ^ "D27512-30 Datasheet" (PDF). Intel. Retrieved 2 July 2019.
  22. ^ "History: 1990s". SK Hynix. Retrieved 6 July 2019.
  23. ^ أ ب "Japanese Company Profiles" (PDF). Smithsonian Institution. 1996. Retrieved 27 June 2019.
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